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Product details

The V80H is designed for growth onto substrates of up to 3 inch diameter. A fully optimised deposition configuration ensures highly uniform thin films and optimum source material utilisation.

The system consists of three chambers with independent pumping and control:

• The deposition chamber incorporates all the necessary components for the controlled growth and doping of semiconductor materials.  The source flange may be fitted with up to ten effusion cells.  A monitoring ionisation gauge, RHEED system and residual gas analyser are used for growth and environment monitoring
• The preparation chamber can be equipped with outgassing or parking facilities and can be extended to add surface analysis facilities or another deposition chamber.  An alternative factory fitted configuration, in which both a parking stage and an outgassing stage can be fitted, is provided as an option
• The fast entry chamber/lock (FEL) is low-volume and integral with the preparation chamber.  It can accept a cassette of five sample holders to be loaded into the system at one time.  A cassette outgassing facility may be fitted into the entry chamber

A range of material-specific equipment options are available to provide the versatility required to handle different materials.  For example, a range of throughput pumping systems are provided as options (e.g. the unique  LN2 trapped diffusion pump technology) and a range of growth stage heaters and sources can be fitted to the deposition chamber to satisfy the requirements for specific material research requirements.

X-GEN3000^TM process software runs under Windows XP^TM with full password protection, allowing the System Manager to control the operations permitted to each user. The software enables automated flux calibration, display of chamber pressures and data logging.

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